PART |
Description |
Maker |
M29F800DB90N3T |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
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ST Microelectronics
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29F800 M29F800AB M29F800AT -M295V800AB90N3T M295V8 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:28; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory
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ST Microelectronics 意法半导 STMicroelectronics
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M29F800AB70N1 M29F800AB70N6 M29F800AB70M1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
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ST Microelectronics
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M29W800AB M29W800AB100M1T M29W800AB100M5T M29W800A |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储 81兆812KB × 16低压紫外线存储器和OTP存储 8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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ST Microelectronics
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M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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http:// STMicroelectronics
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M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体兆位128KB的x16的SRAM,多个存储产 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体2兆位128KB的x16的SRAM,多个存储产 PV76L14-18P
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http:// STMicroelectronics N.V. 意法半导
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M27C800-100B1TR M27C800-100B6TR M27C800-100F1TR M2 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 64K (8K x 8) UV EPROM and OTP ROM
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意法半导 STMicroelectronics ST Microelectronics
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M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
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意法半导 STMicroelectronics N.V.
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4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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